conference research / Tier b

ISCSI学会研究

Semiconductor interface control, silicon epitaxy, SiGe and GeSn technologies, SiC, diamond, compound semiconductors, III-nitrides, oxide semiconductors, high-k / low-k dielectrics, epitaxial growth, CVD, MBE, ALD, surface passivation, contacts, nanostructures, microfabrication, SOI/SGOI, III-V on Si, CMOS, HBT, BiCMOS, LEDs, photonic devices, quantum technology, and group-IV semiconductor engineering.

International Symposium on Control of Semiconductor Interfacesは、ロジック / デバイス / プロセス統合の観点から ISCSI, ICSI, ISTDM, semiconductor interfaces, silicon epitaxy, SiGe, GeSn, SiC, diamond, III-nitrides, oxide semiconductors, high-k dielectrics, ALD, MBE, CVD, surface passivation, contacts, nanostructures, Applied Materials, KIOXIA, Samco, GlobalWafers Japan, STMicroelectronics, IMEC, IHP, AIST, NIMS, and official first-listed program affiliation rows を確認するための学会です。公式ページ、募集要項、program、proceedings を分けて確認し、研究室DBや求人DBの分類軸へ接続します。